On Making Goo: Nonlinear Rheology in Chemical Mechanical Polishing Slurries

Chemical Mechanical Polishing (CMP) is a process used by semiconductor device manufacturers to produce flat, smooth surfaces suitable for photolithography. In CMP, a mixture of nanoparticles, chemical components and water act to dissolve, soften, and abrade the surface to remove excess material.

The flow properties of this mixture of nanoparticles, chemicals, and water are of critical importance, especially at high pressures and high velocities where particle-particle interactions can become important. We will explore how these interactions can lead to nonlinear flow properties and cause damage to the semiconductor devices, compromising product yield and reliability.